| 摘要 |
PURPOSE:To enable to effectively utilize the high-output characteristics of the semiconductor laser array element of the title laser by a method wherein the unidirectional laser emitting light is shielded with the inner wall of the stem, and at the same time, the laser emitting light to be shielded is converted its optical intensity into an electrical signal by the photodetector and a detecting signal to correspond to the optical intensity of the laser emitting light is obtained. CONSTITUTION:A semiconductor laser array element 13 is supported in a fixed manner on the inclined plane of the pedestal, the laser beam on one side of the laser beams is irradiated vertically on a window 12 and the laser beam on the other side is made to progress toward the upper wall 14 of a stem 11. A photodetector 15 consisting of an Si-photodiode is contactingly provided at a position of the upper wall 14, whereon the laser beam is irradiated, a detecting signal to correspond to the irradiation intensity is outputted and the detecting signal is feedbacked to a laser drive control circuit 6. Accordingly, the detecting signal to be outputted from the photodetector 15 is discriminated by comparison from the previously set reference value and by controlling the driving current to be flowed to the semiconductor laser array element 13 in such a way as to negate the fluctuation a of the detecting signal, the output laser beam to be taken out can be held at a constant value and a stable light source for the laser output can be obtained. |
