| 摘要 |
PURPOSE:To prevent short circuits along a step in a multilayer device between its lower and upper conductive layers and disruption of wirings belonging to the upper conductive layer by a method wherein the entire surface of a second insulating layer is flattened by forming a P-doped insulating layer on the surface of the first insulating layer. CONSTITUTION:On a semiconductor substrate 11 covered with an impurity- diffused layer 12, a first insulator 13 of PSG or the like is formed. An insulating layer 14 is then formed densely diffused with P by the ion implantation or diffusion method. A conductive layer 15a for contacts and a conductive layer 15b for wirings are formed. A second insulating layer 16 is formed of P-glass or an oxide by CVD under a normal pressure. Next, a second conductive layer 17 is formed. The existence of the P-doped insulating layer 14 on the first insulating layer 13 accelerates the growth of the second insulating layer 16, which alleviates the inclination C in the second insulating layer 16 at a step. This design greatly reduces the possibility for the second conductive layer to be formed excessively thin or of disruption thereof, which contributes to the prevention of short circuits between the first and second conductive layers. |
