| 摘要 |
PURPOSE:To enable a handy use of a voltage comparison circuit by employing a CMOSFET to manufacture it without variations. CONSTITUTION:The source of a first PMOSFET1 is connected to Vdd (the positive side of a power source voltage) while the source of an NMOSFET2 is connected to the first input terminal V1. Likewise, the source of a second PMOSFET3 is connected to the Vdd while an NMOSFET4 is connected to the second input terminal V2. The outputs of the first PMOSFET1 and the NMOSFET2 are connected to the inputs of the first PMOSFET1 and the NMOSFET2 with a feedback means and then, to the second PMOSFET3 and the NMOSFET4. Then, outputs of the second PMOSFET3 and the NMOSFET4 serve as voltage comparison output Vout. Then, the gm ratios of the first inverter and the second inverter are made equal to enable the comparison of voltage from output potential. This simplifies the construction of the voltage comparison circuit thereby permitting a wide variety of uses.
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