| 摘要 |
PURPOSE:To enable a pattern to be printed on photoresist with high contrast and without blots, by coating the surface of a metal for forming a metallic thin film with the same or other metal in the low-vacuum atmosphere into which a suitable gas is introduced for vapor depositing ultra-fine particles of the blackening metal. CONSTITUTION:An Au layer 2 is formed on a silicon wafer 1 by the vacuum deposition. Subsequently, Au is deposited thereon under a vacuum reduced to 10<-1>-10<-2>Torr. This deposition is performed in the atmosphere gas having said degree of vacuum that is realized by introducing air or other gas. Under this condition, a layer of Au fine particles 3 is formed on the surface of the Au layer 2 and the surface thereof is blackened. After the formation of the blackened layer, photoresist 4 is applied thereon. The wafer is then subjected to light exposure and to development. A pattern is transferred by etching the Au layer with the ion etching method, and a resin film is deposited thereon for securing the Au film. The silicon wafer 1 is then removed by etching so as to leave the peripheral region of the silicon wafer in a frame shape. Thus, an Au film having a ultra-fine structure is completed. |
