| 摘要 |
PURPOSE:To form an ohmic electrode on an n type ZnS crystalline substrate by mechanically polishing and chemically polishing one main surface of the n type ZnS crystalline substrate, evaporating Ga through a vacuum deposition method, pressure-welding an In metal on the surface of Ga and thermally treating the whole in a gas atmosphere. CONSTITUTION:A ZnS single crystal is manufactured through a high-pressure melting method, and has very high resistivity. When the resistance of the single crystal is lowered through treatment for 10hr at 1,000 deg.C in a Zn melt, a crystal 11 having low resistivity of several OMEGA.cm is obtained. The crystal 11 is mechanically polished by an alumina abrasive, and etched by pyrophosphoric acid, thus preparing a uniform surface. A Ga evaporating layer 13 in approximately 2,000Angstrom is formed on the surface. An In wire 15 is pressure-welded to the Ga evaporating layer 13 through ultrasonic vibrations using an ultrasonic vibrating terminal 14. The In wire is pressure-welded and thermally treated for 5min at 370 deg.C in an Ar atmosphere, thus forming an ohmic electrode. |
