| 摘要 |
PURPOSE:To make larger the resistance to a thermal cycling, and moreover, to prevent it for an undesired tunnel barrier layer to be formed by a method wherein a thin metal layer is formed between an electrode, which combines with a wiring and a supporting body, and a base electrode. CONSTITUTION:An insulating layer 12 is formed on an Si substrate 11 and an electrode 13, which combines with a wiring consisting of a superconductor and a supporting body, is formed thereon. A metal layer 15 of a film thickness of less than 100Angstrom is formed on a base electrode formation programming region of the surface of the electrode 13. The surface of the electrode 13 is protected from being subjected to a natural oxidation by an existence of this layer 15. A base electrode 16 consisting of a superconductive layer is formed on the layer 15. An insulating layer 17 is formed on a region outside the Josephson junction formation programming region. An insulating layer 18, which constitutes a tunnel barrier layer, is formed on the surface of the electrode 16. An opposed electrode 19 consisting of a superconductive layer is formed. According to this constitution, there exists no undesired tunnel barrier layer on the interface of the electrode 13 and the electrode 16, because there exists no natural oxide film between the electrodes 13 and 16. As a result, the electrical contact between the electrode 13 and the electrode 16 becomes very favorable. |
