| 摘要 |
PURPOSE:To improve reproducibility and crystallizability by forming a GaAs crystal layer onto a GaAlAs crystal layer, melting back the GaAs crystal layer shaped through MOCVD on second liquid-phase growth and forming a GaAlAs P-N junction. CONSTITUTION:A P type crystal layer 2 is grown on a substrate 1, a grown substrate is extracted from a furnace once, a Ga melt is removed and the surface is cleaned, and a GaAs crystal layer 3 is grown on the P type crystal layer 2 through MOCVD. The GaAs layer 3 is melted back before second liquid- phase growth, and a P type layer 4, a P type layer 5 and an N type layer 6 are grown. The GaAs substrate 1 is removed through selective etching by an ammonia group etching liquid after epitaxial growth, ohmic electrodes are shaped to the P type layer 2 by AuZn to the N type layer 6 by AuGeNi, and the whole is molded with a resin. As the result of the measurement of optical outputs, the greater part of elements extend over 2,000mcd or more at forward currents of 20mA. Accordingly, a light-emitting diode with a thick-film GaAlAs substrate having excellent reproducibility and crystallizability can be manufactured. |
