| 摘要 |
PURPOSE:To prevent the generation of a surface defect, and to reduce leakage currents by growing an epitaxial layer on a substrate and thermally treating the whole according to a predetermined method. CONSTITUTION:An epitaxial layer 2 having the same conduction type as a semiconductor substrate 1 is grown on the semiconductor substrate 1 in 10-20mum. Defects 3 are formed through heat treatment for 30hr at 700 deg.C and heat treatment for 6hr at 1,000 deg.C. Ions having a conduction type reverse to the conduction type of the semiconductor substrate 1 are implanted selectively, and a well 4 is shaped through a drive-in for 6hr at 1,200 deg.C. Since the defects 3 in which oxygen is precipitated are formed, oxygen concentraion in the substrate 1 lowers, and the layer 2 is held as a non-defect region. |
