| 摘要 |
PURPOSE:To prevent data breakdown by a method wherein the neighborhood of memory cell parts is provided with a region of reverse conductivity type to that of a semiconductor substrate connected to a power source line so as to surround part or whole of the memory cells. CONSTITUTION:Two memory cell parts 101 are formed in the P type semiconductor substrate 100, and an N<+> diffused layer 103 is arranged in the neighborhood of the cell parts 101 so as to surround part of whole of these parts. The layer 103 is kept at a potential of the power source VCC with an Al wiring in ohmic contact with the layer 103. A peripheral circuit 105 is formed in the substrate 100 around the cell parts 101. Electrons (e) are injected into the substrate 100 by operation of the circuit 105. Most of the electrons (e) are absorbed to the layers 103, thus preventing charges stored in the diffused layer 104 of the cell part 101 from being eliminated by electrons (c). The layer 103 acts as a prevention wall and prevents the inflow of outer charged to the cell parts 101, resulting in the block of data breakdown. |
