| 摘要 |
An etching method for fabricating a contact hole in an insulating layer between multi-layered wiring layers of a semiconductor device. Etching is performed by chemical dry etching, in which the plasma of the etchant gas is formed in a separate chamber and fed to the etching chamber. The substrate is covered with a photo resist mask which includes a pattern hole and is heated, from the side opposite the mask, up to a softening temperature of the photo resist. The edge of the photo resist mask surrounding the pattern hole gradually rolls up as side etching proceeds under the edge of the photo resist mask with the result that the side walls of the contact hole are tapered. Consequently, the subsequently formed wiring layer formed thereon has good step coverage over the side walls of the contact hole, so that discontinuities and breakage of the wiring layer is prevented and the reliability and yield of the manufacturing process are improved.
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