发明名称 DICING BLADE FOR SEMICONDUCTOR SUBSTRATE
摘要 <p>PURPOSE:To reduce the formation of chipping by making the thickness of the peripheral edge part of a wafer thinner than that of the holding part and increasing the grinding amount on the uppersurface of the wafer with the increase of the depth of cutting-in, thus reducing the resistance in cutting operation. CONSTITUTION:The peripheral edge part 11a of a blade 11 is formed thinner than the thickness of a nipping part which does not cut a wafer 4 and is held by a holder 2, and the thickness of the blade 11 is varied into straight-line form from the peripheral edge part 11a towards the holding part 11b in symmetrical form with respect to the center of thickness of the blade 11, as shown on the side 11c, and the shape of the section of the blade 11 is formed into isosceles trapezoid. When the wafer 4 is cut by using the blade 11 thus formed, the taper coinciding with the shape of the blade 11 is formed on the wafer edge surfaces on the both sides of the cut part 12, and the amount of cutting-in gradually increases as the depth of cutting-in increases, and the formation of chipping on the uppersurface of the wafer 4 can be reduced.</p>
申请公布号 JPS60197372(A) 申请公布日期 1985.10.05
申请号 JP19840050233 申请日期 1984.03.16
申请人 TOSHIBA KK 发明人 SASAKI SHIGEO
分类号 H01L21/301;B24D5/12;H01L21/78 主分类号 H01L21/301
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