| 摘要 |
PURPOSE:To increase the adherence between a conductive Au layer and a SiO2 layer as a protective layer by forming a protective layer covering part of a conductor through SiO2 spattering and thermally treating the Au layer on the upper layer of the conductor in a NiCr diffusion manner. CONSTITUTION:First a resistive layer 2a of Ta2N material is evaporated on a glazed ceramic substrate 1 and then a NiCr layer 3a of 500Angstrom thickness is evaporated to be finally provided with an Au layer 3b evaporated in 1mum thickness. After this process, the NiCr layer 3a, the Au layer 3b and the resistive layer 2a are etched simulaneously using a mask. In the meantime, the NiCr layer 3a and the Au layer 3b, only parts which become an exothermic resistor are etched with the use of another mask to form an exothermic resistor 2 and a conductor 3. Next, SiO2 is evaporated in 3mum thickness all over the exothermic resistor 2 and the conductor 3 to provide a SiO2 film 4. Then NiCr is diffused into the Au layer 3b, an upper layer of the conductor 3 from the lower layer 3a by thermal treatment at 300 deg.C for 7hr. |
