| 摘要 |
PURPOSE:To increase Kerr rotation angle without changing a Curie temperature, and to enable recording and regeneration even by a single layer film by adding a proper quantity of Sb to an amorphous magnetic thin-film. CONSTITUTION:A first target 2 consisting of TbFe, a second target 3 composed of CoSb and a discoid substrate 4 on which a TbFeCoSb alloy thin-film is formed are arranged in a vacuum tank 1, and high-frequency power supplies 5, 6 and a DC power supply 7 applying bias voltage to the substrate 4 are annexed. The efficiency of ionization of discharge gas molecules is improved by utilizing Penning discharge phenomenon in which an electric field and a magnetic field cross at right angles by permanent magnets 8, 9, and film formation at high speed proper to mass production is enabled. Atmospheric gas pressure is set within a range of 1X10<-3>-5X10<-3>Torr, and the speed of growth of 0.1-30Angstrom per one turn of the substrate 4 is set. A TbFeCoSb alloy thin-film, the elements of Tb and Fe therein and the elements of Co and Sb therein consist of predetermined ratios, is formed because high-frequency power of 0-2.5kW is each applied among the targets 2, 3 and the substrate 4 on film formation. When using the amorphous magnetic thin-film, Kerr rotation angle are increased at the same Curie temperature, and recording and regeneration are enabled even by a single layer film.
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