| 摘要 |
PURPOSE:A solution for forming compound semiconductor using indium as a solvent is combined with cobalt and they are melted with heat to purify the indium solution and give high-purity semiconductors. CONSTITUTION:In, In-containing compound of element in the III-V groups such as InP, InGaAs, InGaAsP and cobalt are melted with heat to prepare purified indium solution for forming compound semiconductors. According to this process, when they are melted, the cobalt added reacts with phosphorus or arsenic to form stable cobalt phosphide such as CoP, Co2P, Co3P or CoAs, Co2As or Co3As and simultaneously oxygen, sulfur, silicon, zinc and other residual impurities are occluded into these cobalt compounds, resulting in purification of the indium solution. The cobalt compounds are not taken in the semiconductor crystals on their growth from the solution.
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