| 摘要 |
PURPOSE:To obtain the FESFET capable of high-speed action by elimination of the unnecessary floating capacitor of a gate electrode by a method wherein a gate electrode metal deposited by heat treatment is made to react with a semiconductor substrate, resulting in the isolation of the portion running on an insulation film. CONSTITUTION:The resist 243 on the semi-insulation GaAs substrate 21 is patterned by photolithography, and apertures are bored in the source and drain forming regions by processing the three-layer resist 24 by using reactive ion etching with O2 gas; then, and source and drain high concentration ion implanted layers 25 and 26 are formed by Si ion implantation. Next, the whole is put in a resistance heating evaporator, and then annealed for the purpose of implanted-ion implantation in the state that an SiO film 27 has been left only on the ion implanted layers 25 and 26 by lift-off process with a three-layer resist 24 remaining after SiO film vapor deposition. Successively, source and drain ohmic electrodes 28 and 29 are formed by the structure of lamination of AuGe and Au by partial etching removal of the SiO film 27 and an SiO3N4 film 23. Then, a Pt film 30 (301-303) is deposited as a gate electrode metal by utilizing lift-off process with resist. Thereafter, the Pt film 301 on an active layer by heat treatment is embedded by reaction with GaAs. |
