| 摘要 |
PURPOSE:To realize stabilized annealing while controlling thermal modification of a substrate, by closely contacting a cover film provided on an auxiliary substrate and containing high-density As with the As ion implanting surface of a compound semiconductor substrate containing As, and annealing the substrate under this condition in a non-oxidizing atmosphere. CONSTITUTION:A compound semiconductor substrate 3 containing As is placed on a graphite boat 1 and heated in a non-oxidizing atmosphere to be annealed in the following manner. An auxiliary substrate 4 enclosed by a cover film 5 containing high-density As is closely contacted with the upper surface 3a of the substrate 3 and annealed under this condition. According to this method, the As ions implanted in the substrate 3 are inhibited from dispersing outside, and therefore desired ion implantation characteristics can be obtained without causing thermal modification or alteration in composition. |
