发明名称 Silicon carbide electrical insulator material of low dielectric constant
摘要 A silicon carbide electrical insulator material of low dielectric constant comprising an electrically insulating sintered body containing silicon carbide as a main constituent and an element providing electrical insulating properties in sintered state, wherein the sintered body comprises an element selected from V family in the periodic table and the carrier concentration within the crystal grain of silicon carbide is 5x1017 cm-3 or less.
申请公布号 US4544642(A) 申请公布日期 1985.10.01
申请号 US19820373261 申请日期 1982.04.29
申请人 HITACHI, LTD. 发明人 MAEDA, KUNIHIRO;MIYOSHI, TADAHIKO
分类号 C04B35/565;H01B3/02;H01B3/12;H01L23/15;H01L23/34;H05K1/03;(IPC1-7):C22C29/00;C04B35/56 主分类号 C04B35/565
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