发明名称 |
Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device |
摘要 |
A semiconductor device having multiple conductive layers which are satisfactorily connected to one another is disclosed. The multiple conductive layers are respectively insulated by insulation layers and are formed on the semiconductor substrate where circuit elements are formed. Each multiple conductive layer is connected through contact holes having the same depth and at least one conductive layer is connected to the first conductive layer thereunder through an additional conductive layer formed at the same time that the second conductive layer is formed. |
申请公布号 |
US4544941(A) |
申请公布日期 |
1985.10.01 |
申请号 |
US19810274197 |
申请日期 |
1981.06.16 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
ARIIZUMI, SHOJI;SEGAWA, MAKOTO |
分类号 |
H01L21/768;H01L23/522;H01L23/528;H01L27/06;(IPC1-7):H01L29/54;H01L29/04;H01L29/34;H01L29/78 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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