| 摘要 |
PURPOSE:To provide laminated thin films with high bonding strength by a method wherein an Si evaporation film as an intermediate layer is laid between thin films to be diffused mutually therewith. CONSTITUTION:Ti 4, Cu 5 and Ni 8 to be base metals are respectively laminated as the first, second and third layers to join these thin film layers. The films Ti 4 and Cu 5 are interfacially junctioned at relatively low junction strength by means of laying an Si evaporation film 13 between the interface thereof. The active Si evaporation film 13 may be diffused mutually with the Ti 4 and Cu 5 at relatively low temperature of around 400 deg.C to form a silicide easily providing said films Ti 4 and Cu 5 with solid bonding. The Si evaporation film 13 provided with sufficiently thin thickness no exceeding 0.1mum may easily make a junction electrically ohmic. The characteristics of a semiconductor element may not be deteriorated since only an extremely thin Si film is added thereto. |
