| 摘要 |
PURPOSE:To avoid the plastic deformation of a semiconductor wafer by previously forming a large number of gas jets near a wafer take-in-and-out section for a core pipe when a boat on which a large number of the semiconductor wafers are erected at intervals is housed in the furnace core tube and the wafers are oxidized or diffused in a desired manner. CONSTITUTION:A furnace core tube 5 is surrounded by a soaking pipe 1, a heater 2 is wound on the outer circumference of the soaking pipe 1, and a boat 7 with an extruded bar 8 is housed in the furnace core tube 5. A large number of semiconductor wafers 61-63, etc. are erected on the boat 7, and a large number of gas jets 11 are bored previously near a taking-in-and-out section for the wafers 61-63 while being positioned at the pipe wall of the furnace core tube 5. A gas 3 is blown against the wafers 61-63 in the vertical direction from the jets 11, the ambient temperatures of the wafers are lowered up to 78-97% of a heat treatment temperature for the wafers, and temperature difference among the central sections and peripheral sections of the wafers is reduced. Accordingly, the plastic deformation of the wafers is prevented, yield is improved while the tolerance of the speed of carrying of the wafers is spread, and the lowering of a through-put is avoided. |
