Method of manufacturing photovoltaic device

摘要

Mutually spaced apart TCO film portions are formed on a glass substrate. An amorphous silicon film of PIN junction type is formed to cover these TCO film portions, and an aluminum film is formed thereon. The aluminum film in the vicinity of the gap between adjacent TCO film portions is removed by means of a laser beam, and the amorphous silicon film is removed by reactive plasma etching using the aluminum film as a mask to thereby expose portions of the TCO film. An aluminum-titanium film is formed over the aluminum film and the exposed portions of the TCO film. The aluminum-titanium film is separated by means of a laser beam to form a plurality of photoelectric converting regions. The photoelectric converting regions thus formed on the glass substrate are connected in series.