| 摘要 |
PURPOSE:To reduce the parasitic capacity and to accelerate a semiconductor device by extending a base leading electrode from the vicinity of an emitter region toward a base electrode, and extending a collector leading electrode from the vicinity of the emitter region toward a collector electrode in an opposite direction to the base leading direction. CONSTITUTION:An n<+> type buried layer 21 is formed in a p type silicon substrate 1, an n type epitaxially grown layer 3 is formed, and the layer 3 is then partly thermally oxidized, thereby forming an SiO2 film 22 which forms an element separating layer. An n type layer impurity such as As ions are implanted under the prescribed conditions to a polycrystalline silicon film 30, thereby forming an As ion implanted layer 34 adjacent to a B ion implanted layer 32. After an SiO2 film 38 is coated by a CVD method on the overall surface, a heat treatment is performed, ion implanted B to the layer 3 is electrically activated, and diffused in the depthwise direction, thereby forming a p type base region 6. The p type formed polycrystalline silicon film 30a form a base leading electrode 26, and n type formed polycrystalline silicon film 30a forms a base leading electrode 26, and n type formed polycrystalline silicon film 30b forms a collector leading electrode 27. |
