| 摘要 |
PURPOSE:To reduce the number of circuit elements and to attain IC formation of a non-volatile RAM device by combining ROMs each requiring only one volatile RAM consisting of a capacitor part or the like and only one floating gate element circuit. CONSTITUTION:The non-volatile RAM is constituted of a RAM3 formed by a transfer gate T11 and the gate of a TRTC to be a storing capacitance and a ROM4 having an EEPROM or the like of a non-volatile memory TM provided with a floating gate FG of only one floating gate element circuit. When the gate FG of the TRTM is positively charged to erase the EEPROM, and a TRTP is turned on, the TRTC is controlled in accordance with the storage data in the RAM3, the gate FG is positively or negatively charged and the data are transferred to the ROM4 and then transferred to the RAM3 through a recall TRTA. Consequently, the number of circuit constituting elements is reduced and the IC formation of the non-volatile RAM device is attained. |
