| 摘要 |
PURPOSE:To provide recrystallized thin films whose plane orientations are aligned, without resulting grain boundaries or cracks in island areas, by forming narrower portions with a specific shape in a belt-shape semiconductor thin film. CONSTITUTION:An SiO2 film 2 and a polycrystalline silicon layer are coated on a quartz plate 1. Thereafter, when belt-shape polycrystalline silicon thin films 4 are formed using etching, narrower portions 5 are formed so as to become L/l>=2.5, where L is a width in a direction orthogonal to the longitudinal direction of the thin film 4 or the scanning direction A of laser beams and l is a width of the narrower portions in the same direction. Next, an SiO2 layer 7 is deposited thereon to form a silicon substrate 8. On the silicon substrate 8 the laser beams are scanned to recrystallize polycrystalline silicon thin films. In this way, in the island areas 6, single crystal silicon thin films whose plane orientations are aligned and which do not result in cracks are formed. |
