| 摘要 |
<p>PURPOSE:To enable to suppress the operation of the P channel without modifying significantly the manufacturing process by a method wherein the respective structure of the source and drain electrodes of an FET is made into a multilayer structure formed by laminating an a-Si film, a high-melting point metal film and an aluminum film in an order of the a-Si film, the high-melting point metal film and the aluminum film. CONSTITUTION:A high-melting point metal 12 of a thin film is formed on the substrate, whereon a patterning of an a-Si film 4 has been finished, using a vacuum evaporating apparatus of a sputtering device, and successively, a source electrode 6 and a drain electrode 7, both made of Al and so forth, are coated on the high-melting point metal 12 by a vacuum evaporating method, a supptering method and so forth. After a resist for the patterns of the source and drain electrodes 6 and 7 was left in the photo process, an etching is performed on the source and drain electrodes 6 and 7, and successively, an etching is performed on the high-melting point metal 12 and an FET is formed. So long as the high-melting point metal 12 is a metal to form a Schottky barrier when the metal has come into contact with the a-Si film 4, that will do. Particularly, it is desirable that metals of more than one, which are chosen from a metal group of Cr, Ta, W, Ni, Mo and Pt, are used for the manufacture of the high-melting point metal 12. It is desirable that the film thickness of the high-melting point metal 12 is made into a thickness of 1-100Angstrom .</p> |
