发明名称 PHOTOMASK MATERIAL
摘要 PURPOSE:To improve storage stability and adhesion to a resist, and mechanical strength by incorporating carbon in a thin tungsten film. CONSTITUTION:A photomask material is prepared by forming a thin tungsten film 3 contg. 10-70, preferably, 35-55atom% carbon on a base 2. The film 3 may contain other atoms, such as oxygen, nitrogen, or hydrogen. As the thin tungsten film, a thin tungsten film contg. carbon may be formed on the tungsten film layer contg. nitrogen and/or oxygen. An amt. of carbon has no effect if it is <=10atom%, and it is deteriorated in etching characteristics if >70atom%. Carbon can be incorporated by depositing tungsten in an atm. contg. methane acetylene, or the like contg. carbon atoms in the compsn. by vacuum evaporation or sputtering.
申请公布号 JPS60182442(A) 申请公布日期 1985.09.18
申请号 JP19840038283 申请日期 1984.02.29
申请人 KONISHIROKU SHASHIN KOGYO KK 发明人 KATOU TAKAYUKI;HATANO TAKASHI;OKASATO MAYUMI
分类号 G03F1/00;G03F1/54;G03F1/88 主分类号 G03F1/00
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