| 摘要 |
PURPOSE:To increase the resistance to thermal cycling by a method wherein an Au layer is provided on a tunnel barrier layer, and a Pb.Bi alloy layer thereon. CONSTITUTION:An insulation layer 2, a ground plane 3, and insulation layers 4 and 5 are formed on an Si substrate 1, and an In.Au layer 6 is formed thereon by patterning. Next, an insulation layer 7 is formed in the region other than a region scheduled for Josephson junction. Then, the tunnel barrier layer 8 is formed by oxidizing the region of the layer 6 uncovered with the layer 7. An Au layer 9 is formed after the region other than the region of forming an opposite electrode and a wiring is covered with a resist film. The opposite electrode and wiring 10 made of the epsilon single-phase Pb.Bi alloy layer is formed thereon. The gray size of the electrode and wiring 10 thus formed reduces markedly, and the resistance to thermal cycling increases. |
