| 摘要 |
PURPOSE:To eliminate the warpage of wafers by a method wherein scribe lines are provided with U-shaped grooves before adhesion of a metallic wiring film to the surface of a semiconductor wafer. CONSTITUTION:An Si substrate 3 is dry-etched with CCl4+O2 by the use of a resist mask, thus forming a groove 2 with a depth D larger than a width L. Next, when an Al film 1 of 1mum thickness is adhered by sputtering, the film 1 is cut at the groove part and adhered. Thereby, the generation of wafer warpage is eliminated without application of Al stress over the wafer. |
