| 摘要 |
PURPOSE:To effectively prevent the reaction generating between a semiconductor base layer and a metal layer by a method wherein an annealing is performed instantaneously on a high melting point metal silicide. CONSTITUTION:An MoSi2 film 11 is coated on the whole surface of a film whereon a PSG film 10 is covered allover. In the above-mentioned condition, boron is ion-implanted on the whole surface. Then, an annealing is performed instantaneously, i.e., for 10sec or thereabout for example, at the approximate temperature range of 900-1,000 deg.C. Said instantaneous annealing is performed in order to improve the film quality of the MoSi2 film, to activate the ion-implanted boron and to obtain an ohmic contact between the MoSi2 film 11 and p type regions 3 and 4. |
