| 摘要 |
<p>SOLID STATE IMAGE SENSOR A solid state image sensor is disclosed which includes a photosensitive region consisting of a group of first vertical shift registers formed of a plurality of charge transfer devices, photoelectric converting sections electrically separated from one other by a channel stop section between adjacent ones of the first vertical shift registers and capable of accumulating a signal charge and devices transferring the signal charge of the photoelectric converting sections to corresponding one of the first vertical shift registers, a storage section consisting of a group of second vertical shift registers electrically connected to one ends of the first vertical shift registers, respectively, a charge transfer horizontal shift register. electrically connected to one ends of the second vertical shift registers, a section for transferring undesired charges within the first vertical shift registers during a vertical blanking period after a light receiving period, a section for transferring the signal charge from the photoelectric converting sections to the first vertical shift registers, and a section for transferring a remaining charge determined by the signal charge again from the photoelectric converting sections to the first vertical shift registers after the signal charge is transferred from the first vertical shift registers to the second vertical shift register groups.</p> |
