| 摘要 |
PURPOSE:To obtain stable gate-wiring structure by forming a gate electrode in three layer structure in which a high melting-point metallic film is held between the gate electrode and a poly Si film. CONSTITUTION:A poly Si film 14 is formed onto an SiO2 film 13 on a P-type Si substrate 10, As ions are implanted, and TiSi 15 is applied and brought into ohmic-contact with the poly Si 14. The poly Si 14 is deposited onto the TiSi film 15, and P ions are implanted so as to reach up to the surface of the film 15. A gate electrode 20 is shaped through photoetching, and N layers 11, 12 are thermally diffused to form the SiO2 13 on the surface. In the constitu tion, the gate electrode 20 has low resistance by the poly Si 14 and the metallic film 15, and the step coverage of a gate wiring at the stepped section of the electrode 20 is stabilized by the doped poly Si layer 14 as an upper layer. Accordingly, a device stably operating positively is acquired. |
