发明名称 DETECTING ELEMENT FOR INFRARED RAY
摘要 PURPOSE:To obtain the titled element, which resists mechanical impact force, handling thereof is easy and which has high sensitivity, by coating at least one surface of a piezoelectric body thin-film, from which a substrate is removed, with an organic film into which an infrared absorption material is mixed. CONSTITUTION:A lead titanate thin-film 2 in 2mum thickness is grown and formed on a magnesium oxide substrate 1 in approximately 300mum thickness by using a sputtering device. A platinum electrode 3 is evaporated and shaped at the central section of the upper surface of the thin-film 2, epoxy resin 4 in 0.5- 1.5mum thickness into which an infrared absorption material is mixed is applied extending over the upper surface of the thin-film 2, and the substrate 1 except the outer circumferential section of the lower surface of the thin-film 2 is etched and removed by concentrated phosphoric acid to form a recessed section 6. A platinum electrode 5 is fitted at the central section of the lower surface of the thin-film 2. The power of carbon, platinum black, etc. is used as the infrared absorption material mixed into epoxy resin 4. Accordingly, sensitivity is increased remarkably while mechanical impact force is also augmented, and handling is facilitated.
申请公布号 JPS60180180(A) 申请公布日期 1985.09.13
申请号 JP19840036568 申请日期 1984.02.27
申请人 MATSUSHITA DENKI SANGYO KK 发明人 UEDA ICHIROU;KAWASHIMA SHIYUNICHIROU;IIJIMA KENJI
分类号 H01L35/08;H01L37/02 主分类号 H01L35/08
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