| 摘要 |
PURPOSE:To make a memory have larger capacity in a small chip area and to simplify its production without making a sense amplifier have higher sensitivity by driving a capacitor which depends its voltage on a cell capacity. CONSTITUTION:An MOS capacitor is used as a cell capacity CS08 in a memory cells 22 and 22' and its source drain electrode is connected to a node S and a gate electrode is connected to a storage word line Z. A reset signal P1 is made into a low level, reset circuits 60 and 60' are brought into inactive condition, and a line Zj is made from a high voltage VZ to a low level, a node S electric potential VS changes by the capacity CS08 coupling. Hereafter when a word line Wj is made a high level, information of the memory 22' is read in a bit line Bi and a reference potential is generated from a reference potential generator circuit 21'. A sense amplifier 30 is activated by a signal P2 and a signal read is amplified. |
