发明名称 PREPARATION OF SINGLE CRYSTAL OF SEMICONDUCTOR
摘要 PURPOSE:To prepare high-quality single crystal of semiconductor, by floating a closed container for storing single crystal in a liquid floating agent, putting prepared crystal in the closed container, annealing it. CONSTITUTION:The crystal raw material 4 and the sealing agent 5 are put in the crucible 3 supported by the shaft 2 in the high-pressure chamer 1, and melted heating by the heaters 6. The seed crystal 9 attached to the tip of the crystal pulling shaft 8 is brought into contact with the raw material melt 4 through the liquid sealing agent 5, and pulled up while rotating the seed crystal 9. when the shoulder part of the single crystal 10 is released from the sealing agent 5, the storing container 14 hung from the tip of the jig 15 for operating the storing container is dropped, the bottom 11 of the container 14 is floated on the sealing agne 5, to form the single crystal 10 with a constant diameter. The prepared single crystal 10 is pulled out from the sealing agent 5, stored in the container 14, annealed to a solidification temperature of the sealing agent 5, the shaft 8 is pulled up, the jig 15 is operated, the container 14 is separated from the sealing agent 5, and the single crystal is annealed to room temperature.
申请公布号 JPS60176986(A) 申请公布日期 1985.09.11
申请号 JP19840030178 申请日期 1984.02.22
申请人 TOSHIBA KK 发明人 FUJII TAKASHI;WATANABE MASAYUKI
分类号 C30B27/02;C30B15/14 主分类号 C30B27/02
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