| 摘要 |
<p>PURPOSE:To form a stable element without any deterioration in characteristics by forming >=2 metallic layers on the thin-film nonlinear resistance element, and removing at least one metallic layer before an insulating layer is formed between the layers. CONSTITUTION:More than two metallic layers 27 and 28 are formed on semiconductor layers 24, 25, and 26 and at least >=1 of the metallic layers 27 and 28 is removed before the insulating layer 29 is formed between the layers. The semiconductor layers 24, 25, and 26 use a-Si. Thus, >=2 metallic layers 27 and 28 are used for the thin-film nolinear resistance element for a display device, and at least >=1 of the metallic layers 27 and 28 is removed before the formation of the interlayer insulating film 29 to form the element which is thin and stable and has a small cularaging change.</p> |
