| 摘要 |
<p>An adhesive layer (3) and an insulating layer (4) of ceramic material are consecutively applied by plasma jet spraying to a surface of a metal substrate (2) roughened by sandblasting. Then a solderable layer (5) is applied to the insulating layer (4) and at least one integrated circuit, in particular a power semiconductor (1) is then soldered to it. The insulating layer (4) makes possible an insulated structure of the integrated circuit under these circumstances. The thickness of the insulating layer (4) is at the same time specified only on the basis of the desired dielectric strength, i.e. the insulating layer (4) is applied thinly enough to ensure a good removal of the heat loss produced in the integrated circuit into the metal substrate (2). The adhesive layer (3) is intended to prevent the insulating layer (4) peeling off under thermal alternating loads. A material whose coefficient of thermal expansion is between that of the metal substrate (2) and that of the ceramic substrate of the insulating layer (4) is therefore used for the insulating layer (3). Preferably, the adhesive layer (3) is made up of a plurality of sublayers in a way which results in a gradual transition in the coefficient of thermal expansion. <IMAGE></p> |
