| 摘要 |
PURPOSE:To prevent Ag-migration from resulting and to reduce heat resistance, by Au-plating shorter inner leads at the longer sides and by Ag-plating longer inner leads at the shorter sides of a lead frame. CONSTITUTION:Wire-connected areas at the tips of shorter inner leads 2 being positioned at the longer sides of a semiconductor device are plated with Au, while wire-connected areas at the tips of longer inner leads 3 being positioned at the shorter sides of a semiconductor device are plated with Ag. Moreover, a tab 1 also may be plated with Ag. In this way, Ag has lower cost than Au, can reduce the heat resistance, and can prevent Ag-migration from resulting. |
