| 摘要 |
PURPOSE:To produce aluminum multilayer interconnections a high yield in short steps by forming an aluminum oxide layer on the surface of an aluminum wiring layer, and coating a silica layer on the wiring layer to flatten the surface. CONSTITUTION:The first aluminum wiring layer 6 is formed by a photomask etching method. The layer 6 is oxidized with an oxygen plasma, and an aluminum oxide film 7 is formed on the surface. A spin-on-glass 8 is coated by a rotary coating method to flatten the surface. A silicon dioxide layer 9 is formed as an interlayer insulating film on the glass 8. After a conducting hole which arrives at the first aluminum layer is formed by a photolithographic technique, the second aluminum wiring layer 10 is deposited by sputtering. The layer 10 is selectively removed to form the second aluminum wiring layer pattern. |
