P-N HOMOGENEOUS JUNCTION ELEMENT

摘要

PURPOSE:To obtain the titled homogeneous junction element having excellent rectifying characteristics and durability by implanting an electron acceptive compound and an electron donative compound to an acetylene high polymer having bulk density of a specific value or higher through an ion implantation method. CONSTITUTION:An electron acceptive compound and an electron donative compound are implanted to an acetylene high polymer having bulk density of 0.7g/cc or higher through an ion implantation method. The ions of an element such as Na<+> are implanted only by 50kV acceleration voltage and the quantity of a dose of 6X10<16>/cm<2> while using a high-frequency discharge type as an ion source from one surface of the high polymer such as an acetylene high polymer film 1 having bulk density of 1.05g/cc to form a polymer section 3, and the ions of Br<+> are implanted to the other surface under the same conditions to shape a polymer section 4, thus preparing a P-N homogeneous junction element. Gold is evaporated to form electrodes 2.