发明名称 FORMING METHOD OF PATTERN
摘要 PURPOSE:To form a pattern for a monomolecular film or a monomolecular depositing film by forming a lift-off layer on a foundation on which the monomolecular film or the monomolecular depositing film is laminated. CONSTITUTION:A pattern forming surface 4-6 in a plate-shaped substrate 4-1 is cleaned sufficiently, a lift-off layer 4-4 is formed according to a desired pattern, and a monomolecular film or monomolecular depositing film 4-5 is laminated on the whole surface. When the lift-off layer 4-4 is removed through etching, the monomolecular film or the monomolecular depositing film shaped on the surface of the lift-off layer 4-4 is removed together with the lift-off layer 4-4, and the monomolecular film or monomolecular depositing film 4-5 of a desired pattern is left on the foundation 4-1, thus completing patterning. The lift-off layer 4-4 is etched through an intrusion of an etching liquid from the stepped sections 4-7 of the lift-off layer and the foundation 4-1. It is because adhesion is weak and density is also small in the monomolecular film or monomolecular depositing film 4-5 formed at the stepped sections.
申请公布号 JPS60173842(A) 申请公布日期 1985.09.07
申请号 JP19840028793 申请日期 1984.02.20
申请人 CANON KK 发明人 HIRAI YUTAKA;TOMITA YOSHINORI;MATSUDA HIROSHI;NISHIMURA YUKIO
分类号 H01L21/306;B05D1/20;B44C1/22;C23F1/02;G03F7/26;H01L21/027;H01L21/205;H01L27/142;H01L51/30;H01L51/42 主分类号 H01L21/306
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