| 摘要 |
PURPOSE:To perform self passivation stably while the reduction in resistance of a gate electrode or wiring is realized by a method wherein the gate electrode or wiring made of high melting point metal is formed and thereafter coated with a thin Si film, and an insulation film is formed on the gate electrode or wiring by heat treatment in an oxidizing atmosphere. CONSTITUTION:After a field oxide film 12 and a gate oxide film 13 are formed on a P type Si substrate 11, an Mo film is adhered by DC magnetron sputtering and processed by patterning by a normal photolithograhy, resulting in the formation of the gate electrode wiring 14. After removal of the gate oxide film on the source and drain, the source 15 and the drain 16 are formed by Si ion implantation by using a photoresist 19 and the Mo 14 as a mask. Successively, the resist is removed by organic treatment and treated with diluted hydrochloric acid; then, an Si layer 17 is formed by adhering an Si film by RF sputtering, and an insulation film layer 18 is formed by oxidizing that layer all in wet O2. |
