| 摘要 |
PURPOSE:To realize a junction field-effect transistor, whereon a higher integration can be realized, in a condition that the withstand voltage thereof is not caused to lower and in such a way that any crack is not generated in the electrode forming parts thereof by a method wherein a silicon dioxide film is formed on the element forming region thickly and flatly by a chemical evaporating method. CONSTITUTION:A thin SiO2 film 22 is formed on an N type Si substrate 21 by a heat oxidizing method, B<+> atoms are ion-implanted, and a source region 24, a drain region 25 and a channel region 27 are formed. P<+> atoms are ion-implanted and a gate region 29 is formed. After that, when a thick SiO2 film 30 is formed on the substrate 21 by a CVD method, the surface of the thick SiO2 film 30 is flatly formed. After windows were opened in a prescribed pattern on this SiO2 film 30 and the thin SiO2 film 22 located under the SiO2 film 30, a gate electrode 31, a source electrode 32 and a drain electrode 33 are respectively formed and a junction field-effect transistor is formed. |
