发明名称 |
MANUFACTURE OF SI3N4-SIC CERAMIC SINTERED BODY |
摘要 |
After sintering, ceramic body of Si3N4-SiC is heat-treated at 500 DEG -1500 DEG C. in atmosphere of gas mixture of chlorine and nitrogen whereby SiC is converted into silicon chloride which in turn is nitrided to form Si3N4 in the pores of the ceramic body to provide closed pore structure. Gas mixture may contain oxygen. Heat treatment may be conducted in pressurized atmosphere of gas mixture. |
申请公布号 |
JPS60171282(A) |
申请公布日期 |
1985.09.04 |
申请号 |
JP19840023912 |
申请日期 |
1984.02.10 |
申请人 |
KUROSAKI YOUGIYOU KK |
发明人 |
MATANO TAIJI;UENO HARUYUKI;FUKUDA KAZUSHIGE |
分类号 |
C04B35/565;C04B35/584;C04B35/593;C04B41/50;C04B41/80;C04B41/87 |
主分类号 |
C04B35/565 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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