| 摘要 |
PURPOSE:To improve the density of integration by a method wherein, in an FET memory with poly Si load resistor, a power supply line, data lines and grounding line are properly distributed and then perpendicularly arranged on Al layers insulated from one another. CONSTITUTION:A semiconductor memory is provided us usual with diffusion layers 10, 11, a gate insulating film 9, a poly Si gate 12 and a word line 6 to be covered with SiO2 film 13. A poly Si load resistor R is provided and then a power supply line 5' and a grounding line 1' are formed of the first Al layers through the intermediary of an SiO2 film 14 while the power supply line 5' is directly connected to a load resistor R at an opening 16. Moreover data layers 3, 4 are formed of the second Al layers through the intermediary of another SiO2 film 15. 17 is another opening. The power supply line 5' made of Al can shorten the resistor R due to no impurity permeation. Besides a word line 6 and the grounding line 1' insulated by the films 13, 14 may be laminated to reduce the required wiring area further improving the density of integration. |
