| 摘要 |
PURPOSE:To increase adhesive strength by boring a window to an insulating film on a semiconductor substrate, forming a conductive layer consisting of three layers of titanium, a barrier metal and silver onto a metal for a Schottky contact applied through the window and shaping a silver electrode plating layer onto the conductive layer. CONSTITUTION:An insulating oxide film 2 is formed onto a semiconductor substrate 1, a Schottky window is bored to the insulating oxide film 2, a tungsten layer 3 is applied as a metal for a Schottky contact through the window to shape a tungsten silicide layer, and layers of titanium 4, platinum 5 and silver 6 are evaporated continuously from an upper surface. The titanium-silver layers except the upper section of the Schottky window are removed through etching, the titanium-platinum-silver layers are stabilized through heat treatment at a low temperature while the barrier height of the tungsten silicide is controlled, and a silver electrode plating layer 7 is shaped. Accordingly, titanium does not creep up to a silver surface layer even through heat treatment, thus reducing a defective external appearance due to the peeling of the silver electrode plating layer. |
