| 摘要 |
PURPOSE:To improve the yield without drop of the resolution in the aperture width direction by a method wherein each photo diode element is split into a plurality of photo diode regions, so as to be used by selecting a region of least ununiformity from among the photo diode regions corresponding to the same split section. CONSTITUTION:Each photo diode element 10 is split into a plurality of photo diode regions 11: this photo diode region 11 is an N<+> type diffused layer produced by ion implantation of e.g. phosphorus. The N<+> type diffused layer of respective photo diode elements 10 are alternately coupled with a photo gate, a transfer gate, and a CCD region in the vertical directions of the figure. The first line is the photo diode region 11 opened between light shielding films 15 and 13, the second is the photo diode region 11 opened between light shielding films 13 and 14, and the third is the photo diode region 11 opened between light shielding films 14 and 16. Therefore, the line of least non-uniformity can be used. |
