MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To eliminate the need for a process through which a single crystal is grown on an insulating substrate, and to manufacture a SOI-CMOS easily by bonding a C-MOS formed to a single crystal substrate with the insulating substrate and removing an unnecessary section in the single crystal substrate. CONSTITUTION:A C-MOS formed to an N type silicon substrate 11 is bonded with an insulator 21 such as a glass substrate. Unnecessary regions in the N type silicon substrate 11 are removed through polishing or etching so that only an active region in the C-MOS is left. Unnecessary silicon is etched by using a resist pattern 41 through photolithography to insularly isolate P-MOS42 and N- MOS43. Lastly, elements are protected by a protective film 51, thus completing a SOI-CMOS.