| 摘要 |
PURPOSE:To process a high-precision and fine pattern with a smaller number of steps, by forming an organic film over an etched film on a substrate and then forming thereon an inorganic film which is formed with a final pattern and with a uniform thickness, and by employing the inorganic film as an etching mask till the final process. CONSTITUTION:After an organic film 3 such as a photo resist or a polyimide resin is coated over a film 2 to be etched such as a polycrystalline silicon film on a substrate 1 and is then baked, an inorganic film 6 such as an amorphous silicon film with a uniform thickness is formed so as to have a predetermined pattern, by a light-utilizing CVD apparatus 7. Thereafter, the organic film 3 is anisotropically etched, for example with oxygen plasma using the inorganic film 6 as an etching mask. Using as an etching mask the pattern of the two layers of the upper inorganic film 6 and the lower organic film 3 produced in this way, the film 2 to be etched is etched with gas plasma such as Freon. |
