| 摘要 |
PURPOSE:To obtain a multilayer interconnection structure in which no crack occurs in an insulating film by removing by etching the insulating film extended from multilayer interconnections when forming the wirings through an interlayer insulating film in a semiconductor device. CONSTITUTION:An SiO2 film 2 is coated on an Si substrate 1 formed with an element region 11, a hole is opened corresponding to part of the element 1, and the first aluminum wiring layer 3 of the prescribed shape is coated while extending on the film 2. Then the second aluminum wiring layer 5 is coated through an SiO2 film 4 to become an interlayer insulating film and the third uppermost aluminum wiring layer 7 is further coated through an SiO2 film 6 of an interlayer insulating film as a semiconductor device. In this structure, the SiO2 film exposed with the portion that no these wiring layers are presented does not remain as it is, but is removed by etching with the wirings disposed thereon as a mask. Thus, a semiconductor device that an interlayer shortcircuit and a wiring disconnection do not occur can be obtained, and the degree of selecting freedom of the insulating film can be increased. |
