发明名称 STROBE SCAN TYPE ELECTRON MICROSCOPE
摘要 PURPOSE:To alleviate the influence of a signal level to a detection signal by providing shielding means between a probe card, a detector and the card, the sample when emitting a pulselike electron beam to a sample to be measured, detecting the secondary electrons generated from the sample to measure the potential distribution of the sample. CONSTITUTION:A semiconductor device is contained in a body which constructs a strobe scan type electron microscope, a pulselike electron beam is emitted through a probe card, and the circuit operation of the device is analyzed. In this structure, the card is composed of a glass epoxy substrate 26b having an electron beam passing hole 26a, a metal 26c is formed as shielding means on one surface, and pattern wirings 26d are formed on the other surface. A connector 26e is led from one end of the wirings 26d, and a probe 26f is connected with the other end. The probe 26f is positioned with a resin member 26g, a metal layer 26h is povided as shielding means thereon, and metal layers 26h, 26c are grounded through the connector 26e.
申请公布号 JPS60165733(A) 申请公布日期 1985.08.28
申请号 JP19840020983 申请日期 1984.02.08
申请人 TOSHIBA KK 发明人 SANO TETSUYA
分类号 G01N23/225;G01R31/26;G01R31/302;H01J37/00;H01J37/28;H01L21/66 主分类号 G01N23/225
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